Raman scattering in ternary AlAsxSb1-x films
| dc.citation.epage | 551 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 547 | en_US |
| dc.citation.volume | 107 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Lin, HC | en_US |
| dc.contributor.author | Ou, J | en_US |
| dc.contributor.author | Hsu, CH | en_US |
| dc.contributor.author | Chen, WK | en_US |
| dc.contributor.author | Lee, MC | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:01:12Z | |
| dc.date.available | 2014-12-08T15:01:12Z | |
| dc.date.issued | 1998 | en_US |
| dc.description.abstract | Thin films of the ternary AlAsxSb1-x alloys, prepared by metalorganic chemical vapor deposition, were studied by Raman scattering. The Raman shifts show one-mode behavior and the forbidden TO phonon scattering is observable due to the relaxed selection rule. Our results of the mixed compounds can be interpreted using the spatial correlation model. Moreover, the enhanced scattering was observed at 2.15 and 2.8 eV which are attributable to the E-0 and E-1 transitions of AlAs and AlSb. (C) 1998 Elsevier Science Ltd. All rights reserved. | en_US |
| dc.identifier.issn | 0038-1098 | en_US |
| dc.identifier.journal | SOLID STATE COMMUNICATIONS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/98 | |
| dc.identifier.wosnumber | WOS:000075136100006 | |
| dc.language.iso | en_US | en_US |
| dc.subject | semiconductors | en_US |
| dc.subject | thin films | en_US |
| dc.subject | optical properties | en_US |
| dc.subject | phonons | en_US |
| dc.title | Raman scattering in ternary AlAsxSb1-x films | en_US |
| dc.type | Article | en_US |