Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films

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dc.citation.epage2360en_US
dc.citation.issue12en_US
dc.citation.spage2358en_US
dc.citation.volume85en_US
dc.citation.woscount14
dc.contributor.authorWang, SJen_US
dc.contributor.authorChen, CHen_US
dc.contributor.authorChang, SCen_US
dc.contributor.authorUang, KMen_US
dc.contributor.authorJuan, CPen_US
dc.contributor.authorCheng, HCen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:38:31Z
dc.date.available2014-12-08T15:38:31Z
dc.date.issued2004-09-20en_US
dc.description.abstractIn this letter, the growth of dense W2C nanowires by a simple thermal annealing of sputter-deposited WCx films in nitrogen ambient is reported. Straight nanowires with a density of 250-260 mum(-2) and length/diameter in the range of 0.2-0.3 mum/13-15 nm were obtained from the 700degreesC-annealed samples, which exhibit good electron field emission characteristics with a typical turn-on field of about 1.7 V/mum. The self-catalytic growth of W2C nanowires is attributed to the formation of alpha-W2C phase caused by carbon depletion in the WCx films during thermal annealing. (C) 2004 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.1791322en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1791322en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/26371
dc.identifier.wosnumberWOS:000224145300068
dc.language.isoen_USen_US
dc.titleGrowth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx filmsen_US
dc.typeArticleen_US

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