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C-band fully integrated SiGe HBT superharmonic QVCO

dc.citation.epage869en_US
dc.citation.issue4en_US
dc.citation.spage867en_US
dc.citation.volume49en_US
dc.citation.woscount0
dc.contributor.authorTseng, S. C.en_US
dc.contributor.authorMeng, C. C.en_US
dc.contributor.authorChang, Y. W.en_US
dc.contributor.authorHuang, G. W.en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.date.accessioned2014-12-08T15:14:21Z
dc.date.available2014-12-08T15:14:21Z
dc.date.issued2007-04-01en_US
dc.description.abstractThis paper demonstrates a 4-GHz monolithic SiGe heterojunction bipolar transistor quadrature voltage-con trolled oscillator (QVCO) using superharmonic coupling topology. The QVCO at 4.17 GHz has phase noise of -116 dBc/Hz at 1 MHz offset frequency, output power of -6 dBm, and the figure of merit - 179 dBc/Hz. The core current consumption is 3.2 mA at 3 V supply voltage. The die size is about 1.4 mm X 1.2 mm. (c) 2007 Wiley Periodicals. Inc.en_US
dc.identifier.doi10.1002/mop.22256en_US
dc.identifier.issn0895-2477en_US
dc.identifier.journalMICROWAVE AND OPTICAL TECHNOLOGY LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1002/mop.22256en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/10957
dc.identifier.wosnumberWOS:000244964500037
dc.language.isoen_USen_US
dc.subjectphase noiseen_US
dc.subjectquadrature voltage-controlled oscillator (QVCO)en_US
dc.subjectSiGe heterojunction bipolar transistor (HBT)en_US
dc.subjecttransformeren_US
dc.subjectsuperharmonic couplingen_US
dc.titleC-band fully integrated SiGe HBT superharmonic QVCOen_US
dc.typeArticleen_US

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