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Effects of polarization on electroreflectance spectroscopy of surface-intrinsic n(+)-type doped GaAs

dc.citation.epage80en_US
dc.citation.issue1en_US
dc.citation.spage78en_US
dc.citation.volume91en_US
dc.citation.woscount0
dc.contributor.authorSung, YGen_US
dc.contributor.authorChiou, SJen_US
dc.contributor.authorWang, DPen_US
dc.contributor.authorLu, YTen_US
dc.contributor.authorHuang, KFen_US
dc.contributor.authorHuang, TCen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.date.accessioned2014-12-08T15:42:53Z
dc.date.available2014-12-08T15:42:53Z
dc.date.issued2002-01-01en_US
dc.description.abstractThe electroreflectance (ER) spectra of a surface-intrinsic n(+)-type doped (100) GaAs have been measured at various polarization angles of the probe beam. Several Franz-Keldysh oscillations were observed above the band-gap energy, thus enabling heavy- and light-hole transitions to be separated by the application of the fast Fourier transform to the ER spectra. From this, the ratios of the amplitudes of the light- to heavy-hole transitions versus angle of polarization were obtained. At a large incident angle (80 degrees), the strength of the field of the probe beam in the normal direction of the sample (F(z)) was varied from zero to a larger component. It was found that the ratios increased with increasing F(z) which is consistent with the theory that the light-hole transition becomes more enhanced with z-polarized light. (C) 2002 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.1420763en_US
dc.identifier.issn0021-8979en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1420763en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/29074
dc.identifier.wosnumberWOS:000172835600013
dc.language.isoen_USen_US
dc.titleEffects of polarization on electroreflectance spectroscopy of surface-intrinsic n(+)-type doped GaAsen_US
dc.typeArticleen_US

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