Effect of CF(4) Plasma on Properties and Reliability of Metal-Induced Lateral Crystallization Silicon Transistors
| dc.citation.epage | H195 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | H192 | en_US |
| dc.citation.volume | 157 | en_US |
| dc.contributor.author | Chang, Chih-Pang | en_US |
| dc.contributor.author | Wu, YewChung Sermon | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:07:50Z | |
| dc.date.available | 2014-12-08T15:07:50Z | |
| dc.date.issued | 2010-01-01 | en_US |
| dc.description.abstract | In this study, a CF(4) plasma etching treatment was applied to metal-induced lateral crystallization (MILC) polycrystalline silicon thin film transistors (poly-Si TFTs). It was found that the electrical properties and reliability of the MILC poly-Si TFTs were improved by the treatment. The minimum off-state currents were also reduced. This is because this etching method involves not only passivating the trap states but also etching away the Ni-related defects on the top surface of MILC poly-Si. | en_US |
| dc.identifier.doi | 10.1149/1.3265989 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.3265989 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6175 | |
| dc.language.iso | en_US | en_US |
| dc.title | Effect of CF(4) Plasma on Properties and Reliability of Metal-Induced Lateral Crystallization Silicon Transistors | en_US |
| dc.type | Article | en_US |
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