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Growth and characterization of Cd1-x-yZnxMnyTe crystals

dc.citation.epage751en_US
dc.citation.issue4en_US
dc.citation.spage747en_US
dc.citation.volume169en_US
dc.contributor.authorChou, WCen_US
dc.contributor.authorChen, FRen_US
dc.contributor.authorChiang, TYen_US
dc.contributor.authorShin, HYen_US
dc.contributor.authorSun, CYen_US
dc.contributor.authorLin, CMen_US
dc.contributor.authorChernYu, Ken_US
dc.contributor.authorTsai, CTen_US
dc.contributor.authorChuu, DSen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:02:12Z
dc.date.available2014-12-08T15:02:12Z
dc.date.issued1996-12-01en_US
dc.description.abstractThe Cd1-x-yZnxMnyTe crystals, having potential in the development of magnetic field sensitive devices, were grown by the temperature gradient solution method at 940 degrees C. All crystals were p-type with resistivity of 10(7) Omega . cm. They have novel magneto-optical properties, and could be substitutes for the Cd1-xZnxTe ternary compounds in certain optoelectronic/integrated-optical device applications.en_US
dc.identifier.doi10.1016/S0022-0248(96)00452-6en_US
dc.identifier.issn0022-0248en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0022-0248(96)00452-6en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/892
dc.language.isoen_USen_US
dc.titleGrowth and characterization of Cd1-x-yZnxMnyTe crystalsen_US
dc.typeArticleen_US

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