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Design of Low-Threshold Photonic Crystal Surface-Emitting Lasers

dc.citation.epage866en_US
dc.citation.issue10en_US
dc.citation.volume24en_US
dc.citation.woscount3
dc.contributor.authorHung, Chih-Tsangen_US
dc.contributor.authorSyu, Yu-Chengen_US
dc.contributor.authorWu, Tzeng-Tsongen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.date.accessioned2014-12-08T15:22:35Z
dc.date.available2014-12-08T15:22:35Z
dc.date.issued2012-05-15en_US
dc.description.abstractWe have investigated the influence of various thicknesses on different layers in GaAs-based photonic crystal surface-emitting lasers (PCSELs), by using the transfer matrix and coupled wave methods to increase the vertically optical confinement factor and to reduce the threshold gain. In addition, the relationship between the threshold gain and the filling factor has been considered. This letter provides an efficient calculation method for designing square-lattice-type PCSEL structures, which shall be useful for the fabrication of low-threshold PCSELs in the near future.en_US
dc.identifier.issn1041-1135en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/15975
dc.identifier.wosnumberWOS:000303010100013
dc.language.isoen_USen_US
dc.subjectCoupled waveen_US
dc.subjectphotonic crystalen_US
dc.subjectsurface-emitting laseren_US
dc.titleDesign of Low-Threshold Photonic Crystal Surface-Emitting Lasersen_US
dc.typeArticleen_US

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