Threshold gain analysis in GaN-based photonic crystal surface emitting lasers
| dc.citation.epage | 1910 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 1908 | en_US |
| dc.citation.volume | 36 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Weng, Peng-Hsiang | en_US |
| dc.contributor.author | Wu, Tzeng-Tsong | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.author | Wang, Shing-Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:11:33Z | |
| dc.date.available | 2014-12-08T15:11:33Z | |
| dc.date.issued | 2011-05-15 | en_US |
| dc.description.abstract | We have analyzed threshold gains and lasing modes in GaN-based photonic crystal (PC) surface emitting lasers (PCSELs) by using the multiple scattering method (MSM) for triangular-lattice PC patterns. Moreover, GaN-based PCSELs with different boundary shapes have been fabricated and measured. The lasing mode at the G band edge of GaN-based PCSELs can be identified by using the angled resolved spectroscopy and matched well to the results calculated by MSM. Threshold conditions in the GaN-based PCSELs with different boundary shapes are obtained by optical pumping and agree well with simulation results. (C) 2011 Optical Society of America | en_US |
| dc.identifier.doi | 10.1364/OL.36.001908 | en_US |
| dc.identifier.issn | 0146-9592 | en_US |
| dc.identifier.journal | OPTICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OL.36.001908 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8851 | |
| dc.identifier.wosnumber | WOS:000290716000056 | |
| dc.language.iso | en_US | en_US |
| dc.title | Threshold gain analysis in GaN-based photonic crystal surface emitting lasers | en_US |
| dc.type | Article | en_US |