InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric

Abstract

N-type metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) devices with an InAs-channel using atomiclayer-deposited (ALD) Al2O3 as a gate dielectric have been fabricated and characterized. The device performances of a set of scaled transistors with and without high-k gate dielectric Al2O3 have been compared to determine the optimum device structure for low power and high speed applications. The measurement results revealed that the high performance InAs-channel MOS-HEMTs with the ALD Al2O3 gate dielectric can be achieved if the structure is designed properly. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3241014] All rights reserved.