Greatly Improved Efficiency Droop for InGaN-Based Green Light Emitting Diodes by Quaternary Content Superlattice Electron Blocking Layer

Abstract

We presented a low efficiency droop behavior green light emitting diodes (LEDs) with a quaternary content InAlGaN/GaN superlattice electron blocking layer (SL-EBL). The light output power shows a 57% enhancement and only 30% efficiency droop, which is attributed to a smooth band bending with a uniform carrier distribution.