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Greatly Improved Efficiency Droop for InGaN-Based Green Light Emitting Diodes by Quaternary Content Superlattice Electron Blocking Layer

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dc.citation.epage16en_US
dc.citation.spage15en_US
dc.citation.woscount0en_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorTzou, An-Jyeen_US
dc.contributor.authorHuang, Jhih-Kaien_US
dc.contributor.authorLin, Bing-Chengen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2017-04-21T06:49:28Z
dc.date.available2017-04-21T06:49:28Z
dc.date.issued2015en_US
dc.description.abstractWe presented a low efficiency droop behavior green light emitting diodes (LEDs) with a quaternary content InAlGaN/GaN superlattice electron blocking layer (SL-EBL). The light output power shows a 57% enhancement and only 30% efficiency droop, which is attributed to a smooth band bending with a uniform carrier distribution.en_US
dc.identifier.isbn978-1-4799-8379-7en_US
dc.identifier.issn2158-3234en_US
dc.identifier.journal15TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES NUSOD 2015en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/135779
dc.identifier.wosnumberWOS:000380401200008en_US
dc.language.isoen_USen_US
dc.subjectGreen LEDsen_US
dc.subjectEfficiency droopen_US
dc.subjectQuaternary superlattice electron blocking layeren_US
dc.titleGreatly Improved Efficiency Droop for InGaN-Based Green Light Emitting Diodes by Quaternary Content Superlattice Electron Blocking Layeren_US
dc.typeProceedings Paperen_US

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