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The influence of temperature on set voltage for different high resistance state in 1T1R devices

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dc.citation.volume12en_US
dc.citation.woscount0en_US
dc.contributor.authorTan, Yung-Fangen_US
dc.contributor.authorSu, Yu-Tingen_US
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorTseng, Yi-Tingen_US
dc.contributor.authorYang, Chih-Chengen_US
dc.contributor.authorZheng, Hao-Xuanen_US
dc.contributor.authorChen, Wen-Chungen_US
dc.contributor.authorLin, Chun-Chuen_US
dc.contributor.authorMa, Xiao-Huaen_US
dc.contributor.authorHao, Yueen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2019-04-02T06:00:29Z
dc.date.available2019-04-02T06:00:29Z
dc.date.issued2019-02-01en_US
dc.description.abstractHfO2-based 1T1R is researched in this paper. The on-off ratio is an important electrical characteristic of RRAM, with a larger on-off ratio being preferable. However, temperature also affects the set process when operating RRAM. This study finds that the set process has different sensitivities to temperature at different high resistance states (HRSs). The set voltage of the higher HRS decreases with increasing temperature, while in the lower HRS, set voltage is independent of temperature. From the result, the lower HRS is better for RRAM because it is stable at different temperatures. (C) 2019 The Japan Society of Applied Physicsen_US
dc.identifier.doi10.7567/1882-0786/aafefaen_US
dc.identifier.issn1882-0778en_US
dc.identifier.journalAPPLIED PHYSICS EXPRESSen_US
dc.identifier.urihttp://dx.doi.org/10.7567/1882-0786/aafefaen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/148810
dc.identifier.wosnumberWOS:000457541700001en_US
dc.language.isoen_USen_US
dc.titleThe influence of temperature on set voltage for different high resistance state in 1T1R devicesen_US
dc.typeArticleen_US

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