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Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment

dc.citation.epageH719en_US
dc.citation.issue9en_US
dc.citation.spageH716en_US
dc.citation.volume156en_US
dc.citation.woscount5
dc.contributor.authorLin, Chao-Chengen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTu, Chun-Haoen_US
dc.contributor.authorChen, Wei-Renen_US
dc.contributor.authorHu, Chih-Weien_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorChen, Sheng-Chien_US
dc.contributor.authorLin, Jian-Yangen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:10:19Z
dc.date.available2014-12-08T15:10:19Z
dc.date.issued2009en_US
dc.description.abstractMo nanocrystal memory was fabricated through annealing the oxygen-incorporated Mo and Si layers. We then investigated the influence an of ammonia plasma treatment on the nonvolatile memory characteristics of a charge storage layer composed of Mo nanocrystal memory embedded in SiO(x). Transmission electron microscopy revealed the nanostructure of the charge storage layer, and X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window reduced, and both retention and endurance improved after the treatment. The reduction in the memory window was attributed to the decrease in charge trapping centers in the surrounding oxide after the treatment. The improvement of retention was interpreted in terms of the nitrogen passivation of traps in the oxide around the Mo nanocrystals. The robust endurance characteristic was attributed to the improvement of the quality of the surrounding oxide by nitrogen passivation.en_US
dc.identifier.doi10.1149/1.3155446en_US
dc.identifier.issn0013-4651en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.3155446en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/7886
dc.identifier.wosnumberWOS:000268405400054
dc.language.isoen_USen_US
dc.subjectannealingen_US
dc.subjectmetal-insulator boundariesen_US
dc.subjectmolybdenumen_US
dc.subjectnanoelectronicsen_US
dc.subjectnanofabricationen_US
dc.subjectnanostructured materialsen_US
dc.subjectpassivationen_US
dc.subjectplasma materials processingen_US
dc.subjectrandom-access storageen_US
dc.subjectsilicon compoundsen_US
dc.subjecttransmission electron microscopyen_US
dc.subjectX-ray photoelectron spectraen_US
dc.titleCharge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatmenten_US
dc.typeArticleen_US

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