High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment
| dc.citation.epage | 70 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 68 | en_US |
| dc.citation.volume | 22 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Pan, TM | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Yang, WL | en_US |
| dc.contributor.author | Cheng, CM | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:44:15Z | |
| dc.date.available | 2014-12-08T15:44:15Z | |
| dc.date.issued | 2001-02-01 | en_US |
| dc.description.abstract | In this letter, a method to grow high quality interpolysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA NaO oxidation, show excellent electrical properties in terms of very high electric breakdown field, ion; leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices. | en_US |
| dc.identifier.doi | 10.1109/55.902834 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.902834 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29883 | |
| dc.identifier.wosnumber | WOS:000167074000007 | |
| dc.language.iso | en_US | en_US |
| dc.subject | N2O | en_US |
| dc.subject | NH3 | en_US |
| dc.subject | nitridation | en_US |
| dc.subject | oddation | en_US |
| dc.subject | oxynitride | en_US |
| dc.subject | RTA | en_US |
| dc.title | High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment | en_US |
| dc.type | Article | en_US |