A Single InN Nanopillar Photodetector with Extended Infrared Response Grown by MOCVD
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Hsu, Lung-Hsing | en_US |
| dc.contributor.author | Kuo, Chien-Ting | en_US |
| dc.contributor.author | Cheng, Yuh-Jen | en_US |
| dc.contributor.author | Chen, Kuan-Chao | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Lin, Shih-Yen | en_US |
| dc.contributor.author | Lin, Chien-Chung | en_US |
| dc.contributor.department | 光電系統研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Institute of Photonic System | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2017-04-21T06:49:16Z | |
| dc.date.available | 2017-04-21T06:49:16Z | |
| dc.date.issued | 2016 | en_US |
| dc.description.abstract | An extended infrared photoresponse is observed in a high quality InN pillar/p-GaN photodetector with self-assembly epitaxy grown by LP-MOCVD. The IR portion photocurrent as high as 14.2% can be measured via AM1.5G solar simulated spectra. | en_US |
| dc.identifier.isbn | 978-1-9435-8011-8 | en_US |
| dc.identifier.issn | 2160-9020 | en_US |
| dc.identifier.journal | 2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/134616 | |
| dc.identifier.wosnumber | WOS:000391286403035 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | A Single InN Nanopillar Photodetector with Extended Infrared Response Grown by MOCVD | en_US |
| dc.type | Proceedings Paper | en_US |
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