超高真空化學氣相沉積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---總計畫(II)

dc.contributor.author	張俊彥	en_US
dc.contributor.author	CHANG CHUN-YEN	en_US
dc.contributor.department	交通大學電機與控制工程研究所	zh_TW
dc.date.accessioned	2014-12-13T10:29:17Z
dc.date.available	2014-12-13T10:29:17Z
dc.date.issued	2000	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC89-2213-E009-131	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=542203&docId=99611	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/89077
dc.language.iso	zh_TW	en_US
dc.subject	超高真空化學氣相沈積法	zh_TW
dc.subject	薄膜電晶體	zh_TW
dc.subject	複晶矽	zh_TW
dc.subject	UHVIVD	en_US
dc.subject	Thin film transistor (TFT)	en_US
dc.subject	Polysilicon	en_US
dc.title	超高真空化學氣相沉積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---總計畫(II)	zh_TW
dc.title	Study of UHVCVD Deposited Poly-Si TFTs with Low Temperature Gate Dielectric and Novel Structure (II)	en_US
dc.type	Plan	en_US

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