CURRENT GAIN OF THE BIPOLAR-TRANSISTOR

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dc.citation.epage5037en_US
dc.citation.issue9en_US
dc.citation.spage5030en_US
dc.citation.volume51en_US
dc.citation.woscount5
dc.contributor.authorWU, CYen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.contributor.departmentNano Facility Centeren_US
dc.date.accessioned2014-12-08T15:06:28Z
dc.date.available2014-12-08T15:06:28Z
dc.date.issued1980en_US
dc.identifier.doi10.1063/1.328384en_US
dc.identifier.issn0021-8979en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.328384en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5042
dc.identifier.wosnumberWOS:A1980KH98600077
dc.language.isoen_USen_US
dc.titleCURRENT GAIN OF THE BIPOLAR-TRANSISTORen_US
dc.typeArticleen_US

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