Stack gate PZT/Al2O3 one transistor ferroelectric memory
| dc.citation.epage | 338 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 336 | en_US |
| dc.citation.volume | 22 | en_US |
| dc.citation.woscount | 51 | |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Yang, MY | en_US |
| dc.contributor.author | Sun, CL | en_US |
| dc.contributor.author | Chen, SY | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:43:40Z | |
| dc.date.available | 2014-12-08T15:43:40Z | |
| dc.date.issued | 2001-07-01 | en_US |
| dc.description.abstract | We have developed single transistor ferroelectric memory using stack gate PZT/Al2O3 structure. For the same similar to 40 Angstrom dielectric thickness, the PZT/Al2O3/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO2/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state, The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time. | en_US |
| dc.identifier.doi | 10.1109/55.930683 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.930683 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29531 | |
| dc.identifier.wosnumber | WOS:000169452500010 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Al2O3 | en_US |
| dc.subject | ferroelectric | en_US |
| dc.subject | memory | en_US |
| dc.subject | PZT | en_US |
| dc.title | Stack gate PZT/Al2O3 one transistor ferroelectric memory | en_US |
| dc.type | Article | en_US |