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利用同步輻射光源對三五族氮化物半導體薄膜之特性研究

dc.contributor.author陳文雄en_US
dc.contributor.department交通大學電子物理系zh_TW
dc.date.accessioned2014-12-13T10:37:06Z
dc.date.available2014-12-13T10:37:06Z
dc.date.issued1999en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC88-2112-M009-031zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=426407&docId=76151en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/94381
dc.language.isozh_TWen_US
dc.subject三五族氮化合物zh_TW
dc.subject同步輻射光源zh_TW
dc.subjectX射線吸收的精細結構光譜zh_TW
dc.subjectX射線駐波zh_TW
dc.subjectIII-V nitrideen_US
dc.subjectSynchrotron radiationen_US
dc.subjectX-ray absorption fine structure (XAFS)en_US
dc.subjectX-ray standing wave (XSW)en_US
dc.title利用同步輻射光源對三五族氮化物半導體薄膜之特性研究zh_TW
dc.titleSynchrotron Radiation Characterization of III-V Nitride Semiconductor Filmsen_US
dc.typePlanen_US

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