Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range
| dc.citation.epage | 1021 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 1013 | en_US |
| dc.citation.volume | 55 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Yang, Hung-Pin D. | en_US |
| dc.contributor.author | Hsu, I. -Chen | en_US |
| dc.contributor.author | Lai, Fang-I. | en_US |
| dc.contributor.author | Lin, Gray | en_US |
| dc.contributor.author | Hsiao, Ru-Shang | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Chi, Jim Y. | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.date.accessioned | 2014-12-08T15:12:44Z | |
| dc.date.available | 2014-12-08T15:12:44Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.abstract | We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (< 1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied. | en_US |
| dc.identifier.doi | 10.1080/09500340701576288 | en_US |
| dc.identifier.issn | 0950-0340 | en_US |
| dc.identifier.journal | JOURNAL OF MODERN OPTICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1080/09500340701576288 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9808 | |
| dc.identifier.wosnumber | WOS:000254947700013 | |
| dc.language.iso | en_US | en_US |
| dc.subject | InGaAs | en_US |
| dc.subject | photonic-crystal | en_US |
| dc.subject | sub-monolayer | en_US |
| dc.subject | quantum-dot | en_US |
| dc.subject | VCSEL | en_US |
| dc.title | Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range | en_US |
| dc.type | Article | en_US |