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Controlling contaminants with enhanced gas leak detection

dc.citation.epage+en_US
dc.citation.issue7en_US
dc.citation.spage89en_US
dc.citation.volume50en_US
dc.citation.woscount2
dc.contributor.authorLi, Shou-Nanen_US
dc.contributor.authorLeu, Gen-Houen_US
dc.contributor.authorYen, Shaw-Yien_US
dc.contributor.authorChiou, Shin-Fuen_US
dc.contributor.authorYu, Sheng-Jenen_US
dc.contributor.authorHsu, Chang-Fuen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.date.accessioned2014-12-08T15:13:42Z
dc.date.available2014-12-08T15:13:42Z
dc.date.issued2007-07-01en_US
dc.description.abstractIn semiconductor and optoelectronics manufacturing, many hazardous gases are used. Quickly finding-and terminating the source of such airborne molecular contaminants (AMC) are essential for the safety and well-being of employees, the general public, and fab operations. One challenge when trying to quickly resolve a hazardous gas leak is being able to detect concentrations that are below the typical permissible exposure limits of open-area gas sensors. To address the problem of detecting very low concentration levels (1 similar to 10ppb), a gas leak detection system (GLDS) was developed and on-site teste in 8 '' and 12 '' fabs. The results demonstrated its effectiveness to immediately locate the source of the leak and thus reduce potential fab losses.en_US
dc.identifier.issn0038-111Xen_US
dc.identifier.journalSOLID STATE TECHNOLOGYen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/10602
dc.identifier.wosnumberWOS:000248268100012
dc.language.isoen_USen_US
dc.titleControlling contaminants with enhanced gas leak detectionen_US
dc.typeArticleen_US

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