Effect of CF4 plasma pretreatment on low temperature oxides
| dc.citation.epage | 2170 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 2163 | en_US |
| dc.citation.volume | 49 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Chang, TY | en_US |
| dc.contributor.author | Chen, HW | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:41:43Z | |
| dc.date.available | 2014-12-08T15:41:43Z | |
| dc.date.issued | 2002-12-01 | en_US |
| dc.description.abstract | This study describes a novel technique for forming low temperature oxides (<350 degreesC) using a replacement metal gate process. Low temperature oxides were generated by N2O plasma in a PECVD system with pretreatment in CF4. Fabricated oxides demonstrate excellent current-voltage (I-V) characteristics, such as low leakage current, high breakdown charge and good reliability. Experimental results indicate that CF4 plasma treatment can significantly improve the mobility and resistance against hot carrier stress of MOSFETs. With excellent electrical properties, this technique is suitable for fabrication low temperature devices. | en_US |
| dc.identifier.doi | 10.1109/TED.2002.807451 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TED.2002.807451 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28363 | |
| dc.identifier.wosnumber | WOS:000180982000009 | |
| dc.language.iso | en_US | en_US |
| dc.subject | low temperature oxides | en_US |
| dc.subject | mobility and hot carrier stress | en_US |
| dc.subject | N2O/CF4 plasma | en_US |
| dc.subject | Qbd | en_US |
| dc.subject | replacement metal gate | en_US |
| dc.subject | TDDB | en_US |
| dc.title | Effect of CF4 plasma pretreatment on low temperature oxides | en_US |
| dc.type | Article | en_US |