RAMAN CHARACTERIZATIONS OF RUTHENIUM DICHALCOGENIDES
| dc.citation.epage | 3964 | en_US |
| dc.citation.issue | 7A | en_US |
| dc.citation.spage | 3962 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | HWANG, ST | en_US |
| dc.contributor.author | HUANG, JK | en_US |
| dc.contributor.author | HUANG, YS | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:55Z | |
| dc.date.available | 2014-12-08T15:03:55Z | |
| dc.date.issued | 1994-07-01 | en_US |
| dc.description.abstract | Raman scattering of single-crystal RuTe2 has been carried out with good frequency resolution and wide wavelength coverage. In this article, our results are presented and compared with those for other ruthenium dichalcogenides (RuSe2, and RuS2) reported previously. We found a good linear relationship between all Raman shifts and the reciprocal chalcogen mass. We also observed resonant scattering related to inter-electronic-band transitions. | en_US |
| dc.identifier.doi | 10.1143/JJAP.33.3962 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.33.3962 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2440 | |
| dc.identifier.wosnumber | WOS:A1994PE44700031 | |
| dc.language.iso | en_US | en_US |
| dc.subject | RAMAN SCATTERING | en_US |
| dc.subject | RUTHENIUM DICHALCOGENIDES | en_US |
| dc.subject | RESONANT SCATTERING | en_US |
| dc.title | RAMAN CHARACTERIZATIONS OF RUTHENIUM DICHALCOGENIDES | en_US |
| dc.type | Article | en_US |