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Directional light extraction enhancement from GaN-based film-transferred photonic crystal light-emitting diodes

dc.citation.epageen_US
dc.citation.issue12en_US
dc.citation.volume94en_US
dc.citation.woscount42
dc.contributor.authorLai, Chun-Fengen_US
dc.contributor.authorChao, Chia-Hsinen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorYen, His-Hsuanen_US
dc.contributor.authorLee, Chia-Enen_US
dc.contributor.authorYeh, Wen-Yungen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:09:45Z
dc.date.available2014-12-08T15:09:45Z
dc.date.issued2009-03-23en_US
dc.description.abstractExperimental investigation of the directionality in the far-field pattern and light extraction enhancement in collected cone were performed in GaN-based film-transferred photonic crystal (PhC) light-emitting diodes (FTLEDs). Angular-resolved measurement revealed directional profile and azimuthal anisotropy in the far-field distribution with guided modes extraction. Good agreement according to Bragg's diffraction theory and free photon band structure were achieved. The light enhancement in PhC FTLEDs compared to non-PhC FTLEDs within the collection cone angle was obtained according to measured three-dimensional far-field patterns. In a +/- 20 degrees collection cone, collected light was enhanced by a factor of similar to 2.4 for the collimated PhC FTLED.en_US
dc.identifier.doi10.1063/1.3106109en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3106109en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/7469
dc.identifier.wosnumberWOS:000264633500056
dc.language.isoen_USen_US
dc.subjectgallium compoundsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectlight emitting diodesen_US
dc.subjectphotonic crystalsen_US
dc.subjectwide band gap semiconductorsen_US
dc.titleDirectional light extraction enhancement from GaN-based film-transferred photonic crystal light-emitting diodesen_US
dc.typeArticleen_US

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