AN INVESTIGATION OF MINORITY-CARRIER LIFETIME IN SILICON DOPED EITHER WITH ZINC OR COBALT
| dc.citation.epage | 6 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 1 | en_US |
| dc.citation.volume | 48 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.author | SU, YK | en_US |
| dc.contributor.author | CHI, CC | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.date.accessioned | 2014-12-08T15:06:28Z | |
| dc.date.available | 2014-12-08T15:06:28Z | |
| dc.date.issued | 1980 | en_US |
| dc.identifier.issn | 0020-7217 | en_US |
| dc.identifier.journal | INTERNATIONAL JOURNAL OF ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5043 | |
| dc.identifier.wosnumber | WOS:A1980JV10700001 | |
| dc.language.iso | en_US | en_US |
| dc.title | AN INVESTIGATION OF MINORITY-CARRIER LIFETIME IN SILICON DOPED EITHER WITH ZINC OR COBALT | en_US |
| dc.type | Article | en_US |
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