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THE PD-ZN SYSTEM FOR OHMIC CONTACTS TO P-TYPE GAP

dc.citation.epage113en_US
dc.citation.issue1en_US
dc.citation.spage109en_US
dc.citation.volume31en_US
dc.citation.woscount5
dc.contributor.authorLEI, TFen_US
dc.contributor.authorJENG, GKen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:06:01Z
dc.date.available2014-12-08T15:06:01Z
dc.date.issued1988-01-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4577
dc.identifier.wosnumberWOS:A1988L593300016
dc.language.isoen_USen_US
dc.titleTHE PD-ZN SYSTEM FOR OHMIC CONTACTS TO P-TYPE GAPen_US
dc.typeArticleen_US

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