Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer
| dc.citation.epage | en_US | |
| dc.citation.issue | 18 | en_US |
| dc.citation.volume | 92 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Wu, Chi-Chang | en_US |
| dc.contributor.author | Wu, Wen-Fa | en_US |
| dc.contributor.author | Ko, Fu-Hsiang | en_US |
| dc.contributor.author | You, Hsin-Chiang | en_US |
| dc.contributor.author | Yang, Wen-Luh | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 材料科學與工程學系奈米科技碩博班 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Graduate Program of Nanotechnology , Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:12:11Z | |
| dc.date.available | 2014-12-08T15:12:11Z | |
| dc.date.issued | 2008-05-05 | en_US |
| dc.description.abstract | The thermal and morphological stability of NiSi is enhanced by inserting a polycrystalline (poly-Si) buffer layer between the Ni and poly-SiGe films. NiSi films formed on poly-Si/poly-SiGe stack layers possessed continuous, smooth structures after annealing at 500-850 degrees C. Moreover, nickel germanosilicide [Ni(Si, Ge)] lines formed on the poly-SiGe exhibited a fine-line effect, i.e., the sheet resistance increased upon decreasing the linewidth, whereas the sheet resistance of NiSi lines formed on the poly-Si/poly-SiGe stack layers remained less than 5 Omega/square. A model for the stress-confined grain growth and recrystallization is proposed to explain the improved properties of the poly-Si-buffered film. (c) 2008 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2920202 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2920202 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9344 | |
| dc.identifier.wosnumber | WOS:000256485700030 | |
| dc.language.iso | en_US | en_US |
| dc.title | Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer | en_US |
| dc.type | Article | en_US |