A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel
| dc.citation.epage | 645 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 643 | en_US |
| dc.citation.volume | 26 | en_US |
| dc.citation.woscount | 44 | |
| dc.contributor.author | Lin, HC | en_US |
| dc.contributor.author | Lee, MH | en_US |
| dc.contributor.author | Su, CJ | en_US |
| dc.contributor.author | Huang, TY | en_US |
| dc.contributor.author | Lee, CC | en_US |
| dc.contributor.author | Yang, YS | en_US |
| dc.contributor.department | 生物科技學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Biological Science and Technology | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:18:31Z | |
| dc.date.available | 2014-12-08T15:18:31Z | |
| dc.date.issued | 2005-09-01 | en_US |
| dc.description.abstract | A very simple and low-cost scheme is proposed for fabricating thin-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter. | en_US |
| dc.identifier.doi | 10.1109/LED.2005.853669 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2005.853669 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13323 | |
| dc.identifier.wosnumber | WOS:000231577900015 | |
| dc.language.iso | en_US | en_US |
| dc.subject | nanowires | en_US |
| dc.subject | poly-Si | en_US |
| dc.subject | sensor device | en_US |
| dc.subject | thin-film transistors (TFTs) | en_US |
| dc.title | A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel | en_US |
| dc.type | Article | en_US |