Strong Enhancements in Static/Dynamic Performances of High-Speed 850 nm Vertical-Cavity Surface-Emitting Lasers with P-type delta-Doping in Highly Strained Active Layers

Abstract

By using p-type modulation doping in the highly strained MQWs of high-speed 850 nm VCSELs, significant enhancements in speed, slope efficiency, and maximum power have been simultaneously achieved as compared to those of un-doped references