Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering
| dc.citation.epage | 1809 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 1805 | en_US |
| dc.citation.volume | 47 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Lai, FI | en_US |
| dc.contributor.author | Hsueh, TH | en_US |
| dc.contributor.author | Chang, YH | en_US |
| dc.contributor.author | Shu, WC | en_US |
| dc.contributor.author | Lai, LH | en_US |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:40:18Z | |
| dc.date.available | 2014-12-08T15:40:18Z | |
| dc.date.issued | 2003-10-01 | en_US |
| dc.description.abstract | In this paper, we report a novel implanted vertical surface emitting lasers (VCSELs) utilizing silicon implantation induced disordering. The VCSELs exhibit kink-free current-light Output performance with threshold currents similar to2.4 mA, and the slope efficiencies similar to0.45 W/A. The threshold current change with temperature is minimal and the slope efficiency drops less than similar to30% when the substrate temperature is raised to 90 degreesC. The eye diagram of VCSEL operating at 2.125 Gb/s with 7 mA bias and 10 dB extinction ratio shows very clean eye with jitter less than 30 ps. We have accumulated life test data up to 5000 It at 100 degreesC/20 mA with exceptional reliability and the WHTOL (high temperature and high humidity 85 degreesC/85 operating lifetime) biased at 8 mA has passed over 2000 h. (C) 2003 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S0038-1101(03)00142-4 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0038-1101(03)00142-4 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27512 | |
| dc.identifier.wosnumber | WOS:000185129400034 | |
| dc.language.iso | en_US | en_US |
| dc.subject | VCSEL | en_US |
| dc.subject | Si implant | en_US |
| dc.subject | disordering | en_US |
| dc.subject | kink | en_US |
| dc.title | Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering | en_US |
| dc.type | Article | en_US |