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Comparative study between conventional and diffusion-bonded Nd-doped vanadate crystals in the passively mode-locked operation

dc.citation.epage9524en_US
dc.citation.issue9en_US
dc.citation.spage9518en_US
dc.citation.volume18en_US
dc.citation.woscount6
dc.contributor.authorHuang, Y. J.en_US
dc.contributor.authorHuang, Y. P.en_US
dc.contributor.authorLiang, H. C.en_US
dc.contributor.authorSu, K. W.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorHuang, K. F.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:07:02Z
dc.date.available2014-12-08T15:07:02Z
dc.date.issued2010-04-26en_US
dc.description.abstractWe design a reliable linear three-element cavity to make a comparative study between the conventional and diffusion-bonded Nd:GdVO(4) crystals in the passively mode-locked operation. Experimental investigations reveal that the mode-locked pulse width obtained with the diffusion-bonded crystal is considerably broader than that obtained with the conventional crystal, even though the diffusion-bonded crystal can significantly reduce the thermal effects. The pulse broadening is experimentally verified to come from the length of the undoped part that brings in a reduction of the spatial-hole-burning (SHB) effect. (C) 2010 Optical Society of Americaen_US
dc.identifier.doi10.1364/OE.18.009518en_US
dc.identifier.issn1094-4087en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.18.009518en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5505
dc.identifier.wosnumberWOS:000277082200082
dc.language.isoen_USen_US
dc.titleComparative study between conventional and diffusion-bonded Nd-doped vanadate crystals in the passively mode-locked operationen_US
dc.typeArticleen_US

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