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Discrete Dopant Induced Characteristic Fluctuations in 16nm Multiple-Gate SOI Devices

dc.citation.epage118en_US
dc.citation.spage117en_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorHwang, Chih-Hongen_US
dc.contributor.authorHuang, Hsuan-Mingen_US
dc.contributor.authorYeh, Ta-Chingen_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.date.accessioned2014-12-08T15:15:13Z
dc.date.available2014-12-08T15:15:13Z
dc.date.issued2007en_US
dc.identifier.doi10.1109/IVS.2007.4290101en_US
dc.identifier.isbn978-1-4244-0879-5en_US
dc.identifier.issn1078-621Xen_US
dc.identifier.journal2007 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/IVS.2007.4290101en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/11445
dc.identifier.wosnumberWOS:000262360800056
dc.language.isoen_USen_US
dc.titleDiscrete Dopant Induced Characteristic Fluctuations in 16nm Multiple-Gate SOI Devicesen_US
dc.typeProceedings Paperen_US

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