Comparison of GaInP/GaAs HBT RFDs with resistive loads and shunt-shunt feedback active loads

Abstract

An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated from 4 to 26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active loading type obviously has wider operating frequency and lower input sensitivity. The f(max)/f(min), ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7 mW at the supply voltage of 5 V The chip size is 1.0 x 1.0 mm(2). (c) 2007 Wiley Periodicals, Inc.