High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts
| dc.citation.epage | 88 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 86 | en_US |
| dc.citation.volume | 25 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Lee, YJ | en_US |
| dc.contributor.author | Huang, TY | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:39:39Z | |
| dc.date.available | 2014-12-08T15:39:39Z | |
| dc.date.issued | 2004-02-01 | en_US |
| dc.description.abstract | In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current. | en_US |
| dc.identifier.doi | 10.1109/LED.2003.822656 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2003.822656 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27075 | |
| dc.identifier.wosnumber | WOS:000188807300013 | |
| dc.language.iso | en_US | en_US |
| dc.subject | dynamic threshold voltage MOSFET (DTMOS) | en_US |
| dc.subject | Schottky substrate junction | en_US |
| dc.subject | temperature effect | en_US |
| dc.title | High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts | en_US |
| dc.type | Article | en_US |