The evolution of Ge nanostructures growth on silicon substrate by reduction of GeO2
| dc.citation.epage | 2195 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 2190 | en_US |
| dc.citation.volume | 14 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Wu, Hung-Chi | en_US |
| dc.contributor.author | Chiu, Hsin-Tien | en_US |
| dc.contributor.author | Lee, Chi-Young | en_US |
| dc.contributor.department | 應用化學系 | zh_TW |
| dc.contributor.department | Department of Applied Chemistry | en_US |
| dc.date.accessioned | 2014-12-08T15:22:06Z | |
| dc.date.available | 2014-12-08T15:22:06Z | |
| dc.date.issued | 2012 | en_US |
| dc.description.abstract | Various shaped and sized Ge nanostructures were obtained by reducing GeO2 powder under a H-2 atmosphere in a high-temperature tubular furnace. At a high depositing temperature region, crystalline Ge film was epitaxially grown on a silicon substrate. Jellyfish-like Ge/SiO(2)NWs composite structures were obtained next to germanium epitaxial film grown by Ge-catalyzed vapor-liquid-solid phase segregation mechanism. In addition, at the lower depositing temperature zones, Ge nanowires with various morphologies were formed owing to the temperature and concentration gradient by oxide-assisted vapor-solid mechanism and Ostwald ripening. | en_US |
| dc.identifier.doi | 10.1039/c2ce06485e | en_US |
| dc.identifier.issn | 1466-8033 | en_US |
| dc.identifier.journal | CRYSTENGCOMM | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1039/c2ce06485e | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15695 | |
| dc.identifier.wosnumber | WOS:000300443200042 | |
| dc.language.iso | en_US | en_US |
| dc.title | The evolution of Ge nanostructures growth on silicon substrate by reduction of GeO2 | en_US |
| dc.type | Article | en_US |