Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films
| dc.citation.epage | 3720 | en_US |
| dc.citation.issue | 20 | en_US |
| dc.citation.spage | 3718 | en_US |
| dc.citation.volume | 80 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Tsai, CC | en_US |
| dc.contributor.author | Chang, CS | en_US |
| dc.contributor.author | Chen, TY | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:42:23Z | |
| dc.date.available | 2014-12-08T15:42:23Z | |
| dc.date.issued | 2002-05-20 | en_US |
| dc.description.abstract | In this study, GaN substrates with low-density etch pits were obtained by regrowth on free-standing GaN films (two steps) by hydride vapor-phase epitaxy (HVPE). The etch-pit density was lower than 4x10(4) cm(-2) by atomic-force microscopy. The density is significantly lower than that of the HVPE-grown (one-step) GaN films (HVPE GaN), using sapphire as a substrate. The optical and electrical properties of the two-step HVPE-grown GaN substrates are superior to those of HVPE GaN. Temperature-dependent photoluminescence measurements reveal that thermal quenching behavior of the 2.9 eV band is possibly attributed to a shallow acceptor level at about 118+/-5 meV above the valence band. (C) 2002 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1480108 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1480108 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28783 | |
| dc.identifier.wosnumber | WOS:000175564100018 | |
| dc.language.iso | en_US | en_US |
| dc.title | Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films | en_US |
| dc.type | Article | en_US |