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THE EFFECTS OF THERMAL SILICIDATION ON THE CURRENT TRANSPORT CHARACTERISTICS OF TI/(111)SI SCHOTTKY-BARRIER CONTACTS

dc.citation.epage44en_US
dc.citation.issue1en_US
dc.citation.spage35en_US
dc.citation.volume31en_US
dc.citation.woscount7
dc.contributor.authorTSENG, HHen_US
dc.contributor.authorWU, CYen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department工學院zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentCollege of Engineeringen_US
dc.date.accessioned2014-12-08T15:06:01Z
dc.date.available2014-12-08T15:06:01Z
dc.date.issued1988-01-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4578
dc.identifier.wosnumberWOS:A1988L593300006
dc.language.isoen_USen_US
dc.titleTHE EFFECTS OF THERMAL SILICIDATION ON THE CURRENT TRANSPORT CHARACTERISTICS OF TI/(111)SI SCHOTTKY-BARRIER CONTACTSen_US
dc.typeArticleen_US

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