NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY
| dc.citation.epage | 1159 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 1157 | en_US |
| dc.citation.volume | 54 | en_US |
| dc.citation.woscount | 12 | |
| dc.contributor.author | YARN, KF | en_US |
| dc.contributor.author | WANG, YH | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:52Z | |
| dc.date.available | 2014-12-08T15:05:52Z | |
| dc.date.issued | 1989-03-20 | en_US |
| dc.identifier.doi | 10.1063/1.100747 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.100747 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4392 | |
| dc.identifier.wosnumber | WOS:A1989T690700028 | |
| dc.language.iso | en_US | en_US |
| dc.title | NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY | en_US |
| dc.type | Article | en_US |
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