Advanced TSV-Based Crystal Resonator Devices Using 3-D Integration Scheme With Hermetic Sealing
| dc.citation.epage | 1043 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 1041 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Shih, Jian-Yu | en_US |
| dc.contributor.author | Chen, Yen-Chi | en_US |
| dc.contributor.author | Chiu, Chih-Hung | en_US |
| dc.contributor.author | Hu, Yu-Chen | en_US |
| dc.contributor.author | Lo, Chung-Lun | en_US |
| dc.contributor.author | Chang, Chi-Chung | en_US |
| dc.contributor.author | Chen, Kuan-Neng | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:31:58Z | |
| dc.date.available | 2014-12-08T15:31:58Z | |
| dc.date.issued | 2013-08-01 | en_US |
| dc.description.abstract | An advanced crystal resonator device scheme using Cu through-silicon via (TSV), 3-D integration, and Si packaging technologies is successfully demonstrated. In addition to robust structural quality, the crystal resonator packaging has excellent electrical characteristics of low leakage current and reliability against harsh environment for MIL-STD-883 hermetic encapsulation. Using 3-D integration technologies and Si packaging, the proposed TSV-based crystal resonator device possesses the manufacturability potential while conventional ones using a metal lid or ceramic enclosure. | en_US |
| dc.identifier.doi | 10.1109/LED.2013.2265335 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2013.2265335 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22575 | |
| dc.identifier.wosnumber | WOS:000323911800036 | |
| dc.language.iso | en_US | en_US |
| dc.subject | 3-D integration | en_US |
| dc.subject | crystal resonator through-silicon via (TSV) | en_US |
| dc.title | Advanced TSV-Based Crystal Resonator Devices Using 3-D Integration Scheme With Hermetic Sealing | en_US |
| dc.type | Article | en_US |