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Vortex domain wall depinning by polarized current in submicron half-ring wires

dc.citation.epageen_US
dc.citation.issue8en_US
dc.citation.volume99en_US
dc.citation.woscount3
dc.contributor.authorChen, YSen_US
dc.contributor.authorCheng, KWen_US
dc.contributor.authorYu, Cen_US
dc.contributor.authorLee, SFen_US
dc.contributor.authorChen, DCen_US
dc.contributor.authorWu, SHen_US
dc.contributor.authorLin, MTen_US
dc.contributor.authorLiou, Yen_US
dc.contributor.authorWu, KTen_US
dc.contributor.authorYao, YDen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:16:49Z
dc.date.available2014-12-08T15:16:49Z
dc.date.issued2006-04-15en_US
dc.description.abstractDomain wall pinning force in the junctions (corners), with different shapes of square, semicircle, or triangle, of half-ring in-series wires is considered to study the current injection induced wall movements. This geometry has less thermal activation at the region of domain wall nucleation in contrast to notch structures. The wires with square corners have the largest domain pinning force to resist polarized current-induced magnetization reversal, judging from the largest slope in the current-field dependence (Delta I/Delta H=0.274). (C) 2006 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.2173624en_US
dc.identifier.issn0021-8979en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2173624en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/12363
dc.identifier.wosnumberWOS:000237404200381
dc.language.isoen_USen_US
dc.titleVortex domain wall depinning by polarized current in submicron half-ring wiresen_US
dc.typeArticleen_US

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