Complementary carbon nanotube-gated carbon nanotube thin-film transistor

Abstract

We introduce, a complementary carbon nanotube (CNT)-gated CNT thin-film field effect transistor (FET). By using two perpendicularly crossed single-wall CNT (SWNT) bundles as the gate and the channel interchangeably, a sub-50 nm complementary CNT-FET is demonstrated. It is found that the new CNT-FET shows acceptable FET characteristics by interchanging the roles of the gate and the channel. The unique dual functionality of the device will open up a new possibility and flexibility in the design of future complementary CNT electronic circuits. (c) 2006 American Institute of Physics.