Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-Vapor. pre-gate oxide cleaning
| dc.citation.epage | 627 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 625 | en_US |
| dc.citation.volume | 25 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Lin, YH | en_US |
| dc.contributor.author | Yang, WL | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:38:39Z | |
| dc.date.available | 2014-12-08T15:38:39Z | |
| dc.date.issued | 2004-09-01 | en_US |
| dc.description.abstract | In this paper, we grow and characterize in detail native-oxide-free ultrathin gate oxide on silicon (111) by an advance clustered vertical furnace with in situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of time-to-breakdown, drain current, and transconductance. In-situ HF-vapor cleaning by a clustered vertical furnace appears to be very promising to grow high-quality native-oxide-free gate oxide on silicon (111). | en_US |
| dc.identifier.doi | 10.1109/LED.2004.834733 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2004.834733 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26448 | |
| dc.identifier.wosnumber | WOS:000223577600012 | |
| dc.language.iso | en_US | en_US |
| dc.subject | in situ HF | en_US |
| dc.subject | MOSFETs | en_US |
| dc.subject | native oxide | en_US |
| dc.subject | silicon (111) | en_US |
| dc.subject | vapor | en_US |
| dc.title | Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-Vapor. pre-gate oxide cleaning | en_US |
| dc.type | Article | en_US |