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NOVEL CHARACTERISTICS OF THE POLYSILICON HIGH-LOW-EMITTER (PHL-EMITTER) BIPOLAR-TRANSISTOR HIGH-CURRENT GAIN AND ZERO ACTIVATION-ENERGY

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dc.citation.epage96en_US
dc.citation.issue1en_US
dc.citation.spage93en_US
dc.citation.volume37en_US
dc.citation.woscount0
dc.contributor.authorCHANG, KZen_US
dc.contributor.authorWU, CYen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:04:12Z
dc.date.available2014-12-08T15:04:12Z
dc.date.issued1994-01-01en_US
dc.description.abstractThe polysilicon high low-emitter (PHL-emitter) bipolar transistor with high current gain and zero activation energy at a certain collector current has been fabricated and characterized. It is shown that the higher current gain is mainly due to the narrower base width using the n- implant and the selectively implanted collector. However, the zero activation energy of the current gain at a certain collector current is caused by the two-dimensional flow of the base current. These features are very useful for analog circuit applications where the zero temperature-dependent current gain is required.en_US
dc.identifier.doi10.1016/0038-1101(94)90110-4en_US
dc.identifier.issn0038-1101en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/0038-1101(94)90110-4en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/2710
dc.identifier.wosnumberWOS:A1994MQ09900015
dc.language.isoen_USen_US
dc.titleNOVEL CHARACTERISTICS OF THE POLYSILICON HIGH-LOW-EMITTER (PHL-EMITTER) BIPOLAR-TRANSISTOR HIGH-CURRENT GAIN AND ZERO ACTIVATION-ENERGYen_US
dc.typeArticleen_US

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