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KINETICS OF COMPOSITIONAL DISORDERING OF ALGAAS/GAAS QUANTUM-WELLS INDUCED BY LAW-TEMPERATURE GROWN GAAS

dc.citation.epage4306en_US
dc.citation.issue9en_US
dc.citation.spage4302en_US
dc.citation.volume77en_US
dc.citation.woscount34
dc.contributor.authorTSANG, JSen_US
dc.contributor.authorLEE, CPen_US
dc.contributor.authorLEE, SHen_US
dc.contributor.authorTSAI, KLen_US
dc.contributor.authorCHEN, HRen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:03:23Z
dc.date.available2014-12-08T15:03:23Z
dc.date.issued1995-05-01en_US
dc.identifier.doi10.1063/1.359453en_US
dc.identifier.issn0021-8979en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.359453en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/1931
dc.identifier.wosnumberWOS:A1995QV47900010
dc.language.isoen_USen_US
dc.titleKINETICS OF COMPOSITIONAL DISORDERING OF ALGAAS/GAAS QUANTUM-WELLS INDUCED BY LAW-TEMPERATURE GROWN GAASen_US
dc.typeArticleen_US

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