Doping effect on normal incident InGaAs/GaAs long-wavelength quantum well infrared photodetectors

dc.citation.epage	2683	en_US
dc.citation.issue	5	en_US
dc.citation.spage	2680	en_US
dc.citation.volume	82	en_US
dc.citation.woscount	9
dc.contributor.author	Wang, SY	en_US
dc.contributor.author	Lee, CP	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2014-12-08T15:01:29Z
dc.date.available	2014-12-08T15:01:29Z
dc.date.issued	1997-09-01	en_US
dc.description.abstract	8-12 mu m InGaAs/GaAs quantum well infrared photodetectors with two different well doping concentrations have been studied. The devices with and without surface gratings are compared for normal incident operation. It is found that the TE to TM absorption ratio depends on the doping density in the quantum wells. A higher doping density increases TE absorption.:A detectivity about 1 x 10(10) cm Hz(1/2)/W and a peak responsivity of 0.23 A/W at 9 mu m have been obtained for the grating-free devices. (C) 1997 American Institute of Physics.	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/318
dc.identifier.wosnumber	WOS:A1997XT82100095
dc.language.iso	en_US	en_US
dc.title	Doping effect on normal incident InGaAs/GaAs long-wavelength quantum well infrared photodetectors	en_US
dc.type	Article	en_US

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