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Synthesis of bulk beta-FeSi2 crystal

dc.citation.epage3859en_US
dc.citation.issue6Aen_US
dc.citation.spage3854en_US
dc.citation.volume41en_US
dc.citation.woscount3
dc.contributor.authorHsu, YKen_US
dc.contributor.authorWang, JJen_US
dc.contributor.authorChang, CSen_US
dc.contributor.authorWang, SCen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:42:22Z
dc.date.available2014-12-08T15:42:22Z
dc.date.issued2002-06-01en_US
dc.description.abstractThe feasibility of adopting two methods to synthesizing the bulk crystal of beta-FeSi2, was examined: one involving two-step Bridgmann growth with a three-zone furnace and another invoking melting growth with a single zone furnace, As-grown iron disilicides were annealed in the furnaces at different temperatures for various durations, Experimental result,; indicate that a larger beta-FeSi, crystal can be obtained using the two-step fast Bridgmann growth method kith post-annealing at 1073 K for 300h. Fast cooling and adding some copper impurities to the raw materials were found to promote the growth of beta-FeSi2. The iron disilicide crystal. with a large contribution from the 8 phase, supported a higher thermoelectric power. A thermoelectric power of 450 muV/K was obtained at 300-900 K for the sample with copper doping The energy hand gap of beta-FeSi2 samples was about 0.82-0.88 eV. determined by measuring the temperature-dependent resistivity.en_US
dc.identifier.doi10.1143/JJAP.41.3854en_US
dc.identifier.issn0021-4922en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.41.3854en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/28773
dc.identifier.wosnumberWOS:000177169500049
dc.language.isoen_USen_US
dc.subjectbeta-FeSi2en_US
dc.subjectBridgmann growthen_US
dc.subjectthermoelectric poweren_US
dc.titleSynthesis of bulk beta-FeSi2 crystalen_US
dc.typeArticleen_US

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