OPTICAL GAIN OF A PHOTO-TRANSISTOR WITH ITS BASE NOT ISOLATED
| dc.citation.epage | 429 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 425 | en_US |
| dc.citation.volume | 45 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | FEUCHT, DL | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:06:32Z | |
| dc.date.available | 2014-12-08T15:06:32Z | |
| dc.date.issued | 1978 | en_US |
| dc.identifier.issn | 0020-7217 | en_US |
| dc.identifier.journal | INTERNATIONAL JOURNAL OF ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5109 | |
| dc.identifier.wosnumber | WOS:A1978FW19100009 | |
| dc.language.iso | en_US | en_US |
| dc.title | OPTICAL GAIN OF A PHOTO-TRANSISTOR WITH ITS BASE NOT ISOLATED | en_US |
| dc.type | Article | en_US |
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