Evidence for a Very Small Tunneling Effective Mass (0.03m(0)) in MOSFET High-k (HfSiON) Gate Dielectrics
| dc.citation.epage | 468 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Chen, Ming-Jer | en_US |
| dc.contributor.author | Hsu, Chih-Yu | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:22:45Z | |
| dc.date.available | 2014-12-08T15:22:45Z | |
| dc.date.issued | 2012-04-01 | en_US |
| dc.description.abstract | We have recently conducted experimental and modeling tasks on TaC/HfSiON/SiON n-type MOSFETs, leading to an effective mass of 0.03m(0) for 2-D electrons tunneling in high-k HfSiON dielectrics. In this letter, we present extra evidence obtained from complementary MOSFETs undergoing the same TaC/HfSiON/SiON processing, which shows that such a very small tunneling effective mass is existent not only for 3-D electrons but also for 2-D holes. This new finding is very important because it can substantially enhance the current understanding of gate tunneling leakage suppression in metal-gate high-k MOSFETs. | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16079 | |
| dc.identifier.wosnumber | WOS:000302232900001 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Effective mass | en_US |
| dc.subject | effective oxide thickness (EOT) | en_US |
| dc.subject | HfO2 | en_US |
| dc.subject | HfSiON | en_US |
| dc.subject | high-k | en_US |
| dc.subject | metal gate | en_US |
| dc.subject | MOSFETs | en_US |
| dc.subject | tunneling | en_US |
| dc.title | Evidence for a Very Small Tunneling Effective Mass (0.03m(0)) in MOSFET High-k (HfSiON) Gate Dielectrics | en_US |
| dc.type | Article | en_US |