A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOS
| dc.citation.epage | 1459 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 1456 | en_US |
| dc.citation.volume | 136 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | TSUI, BY | en_US |
| dc.contributor.author | CHEN, MC | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:50Z | |
| dc.date.available | 2014-12-08T15:05:50Z | |
| dc.date.issued | 1989-05-01 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4371 | |
| dc.identifier.wosnumber | WOS:A1989U606500041 | |
| dc.language.iso | en_US | en_US |
| dc.title | A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOS | en_US |
| dc.type | Article | en_US |