Formation of Ni germano-silicide on single crystalline Si0.3Ge0.7/Si
| dc.citation.epage | 466 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 464 | en_US |
| dc.citation.volume | 23 | en_US |
| dc.citation.woscount | 20 | |
| dc.contributor.author | Lin, CY | en_US |
| dc.contributor.author | Chen, WJ | en_US |
| dc.contributor.author | Lai, CH | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Liu, J | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:42:07Z | |
| dc.date.available | 2014-12-08T15:42:07Z | |
| dc.date.issued | 2002-08-01 | en_US |
| dc.description.abstract | We have studied the Ni and Co germano-silicide on Si0.3Ge0.7/Si. The Ni germano-silicide shows a low sheet resistance of 4-6 Omega/square on both P+N and N+P junctions, which is much smaller than Co germano-silicide. In addition, small junction leakage currents of 3 x 10(-8) A/cm(2) and 2 x 10(-7) A/cm(2) are obtained for Ni germano-silicide on P+ N and N+ P junctions, respectively. The good germano-silicide integrity is due to the relatively uniform thickness as observed by cross-sectional TEM. | en_US |
| dc.identifier.doi | 10.1109/LED.2002.801288 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2002.801288 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28616 | |
| dc.identifier.wosnumber | WOS:000177207300007 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Co | en_US |
| dc.subject | Ni | en_US |
| dc.subject | SiGe | en_US |
| dc.subject | silicide | en_US |
| dc.title | Formation of Ni germano-silicide on single crystalline Si0.3Ge0.7/Si | en_US |
| dc.type | Article | en_US |